Evaluation of the effect of FinFET structure parameters on electrical characteristics using TCAD modeling tools

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چکیده

Using TCAD modeling, the effect of changing FinFET structure parameters, such as gate stack layer sizes, rib shape, or doping levels, on electrical characteristics device is investigated.

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ژورنال

عنوان ژورنال: Izvestiâ vysših u?ebnyh zavedenij

سال: 2022

ISSN: ['2072-3040']

DOI: https://doi.org/10.17073/1609-3577-2021-4-222-228